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Hiroshi Ishiwara

Hiroshi Ishiwara, Japanese electronics engineer. Achievements include research of heteroepitaxy of conductive and insulating thin films on semiconductor substrates and research on ferroelectric memory. Recipient prize Japan International Business Machines Corporation Science Prize Committee, 1990, Inoue Science prize, 1994, Ichimura Technology prize, 1994, ISIF Honors, 2000.

Background

  • Ishiwara, Hiroshi was born on November 6, 1945 in Yamaguchi, Japan. Son of Sei-icihiro and Nobuko Ishiwara.

  • Education

    • Bachelor of Engineering, Tokyo Institute of Technology, 1968. MEng, Tokyo Institute of Technology, 1970. Doctor of Engineering, Tokyo Institute of Technology, 1973.

    Career

    • Research associate Tokyo Institute of Technology, 1973-1976, associate professor, 1976-1989, professor, since 1989.

    Major achievements

    • Achievements include research of heteroepitaxy of conductive and insulating thin films on semiconductor substrates and research on ferroelectric memory.

    Works

    • Author: Semiconductor Devices, 1990, Semiconductor Electronics, 2002. Editor: Heteroepitaxy on Silicon: Fundamentals, Structure, Devices.

    Membership

    Fellow Institute of Electrical and Electronics Engineers. Member Material Research Society, Japanese Society Applied Physics.

    Connections

    • Married Kayoko Hoshi, April 7, 1974. 2 children.
    • father: Sei-icihiro Ishiwara
    • mother: Nobuko Ishiwara
    • spouse: Kayoko Hoshi
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    Born November 6, 1945
    (age 71)
    Nationality
    • 1968
      Tokyo Institute of Technology
    • 1970
      Tokyo Institute of Technology
    • 1973
      Tokyo Institute of Technology