Eicke Richard Weber, German physicist. Recipient International Business Machines Corporation Faculty award, 1984, Humboldt United States Senior Scientist award, 1994; research grantee Department of Energy, since 1984, Office Naval Research, since 1985, Air Force Office Science Research, since 1988, National Aeronautics and Space Administration, 1988-1990, National Renewable Energy Laboratory, since 1992.
Bachelor of Science, University Cologne, Federal Republic of Germany, 1970. Master of Science, University Cologne, Federal Republic of Germany, 1973. Doctor of Philosophy, University Cologne, Federal Republic of Germany, 1976.
Doctor of Habilitation, University Cologne, Federal Republic of Germany, 1983.
Scientific assistant University Koeln, 1976-1982. Research assistant University Lund, Sweden, 1982-1983. Assistant professor department material science University California, Berkeley, 1983-1987, associate professor, 1987-1991, professor materials science, since 1991.
Principal investigator Lawrence Berkeley Laboratory, since 1984. Visiting professor Tohoku University, Sendai, Japan, 1990, Kyoto (Japan) University, 2000. Consultant in field; international fellow Institute for Study of Defects in Solids, State University of New York, Albany, 1978-1979.
Chairman numerous conferences. Member founding committee CAESAR Foundation, Bonn, 1995-1997, member scientific council 1999-2004. Lecturer in field.
Achievements include first identification of point defects formed by dislocation motion in silicon. Determination of the energy levels of antisite defects in Gallium Arsenide, of 3d transition metal solubility, diffusivity, and lattice site in silicon, of mechanism of internal gettering in silicon. Research in defects formed in III/V thin films and interfaces.
On growth and characterization of semiconductor nanostructures. In structure and electronic properties of metal Gallium Arsenide heterostructures. In nature and electronic properties of defects in Gallium Arsenide, Gallium nitride, and related compounds.
In MBE growth of Gallium nitride and related compounds. In low-temperature MBE growth of As-rich Gallium Arsenide. In transition metal gettering in silicon.
Multicrystalline silicon for photovoltaic applications. Scanning tunneling microscopy of semiconductor thin films and interfaces. On electron paramagnetic resonance of defects in semiconductors.
Editor: Defect Recognition and Image Processing in III-V Compounds, 1987, Imperfections in III-V Compounds, 1993. Co-editor: Chemistry and Defects in Semiconductor Structures, 1989, others. Series co-editor: Semiconductors and Semimetals, since 1991.
Contributor numerous articles to professional journals.
1976 - 1982
1982 - 1983
1983 - 1987
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