Background
Ioffe, Abram was born on October 29, 1880 in Romny, Poltava Gouvernement.
Ioffe, Abram was born on October 29, 1880 in Romny, Poltava Gouvernement.
1902 graduate St. Petersburg Technol Institute. 1905 graduate Munich University, where he worked under Roentgen.
1906-1913 associate, from 1913 professor, St. Petersburg Polytech Institute. 1913 entitled Master of Physics. 1915 entitled Doctor of Physics for his research on the clastic and electric properties of quartz.
1918-1920 correspondent member, USSR Academy of Sciences. From 1918 founder-head, Physical Engineer Department, State Roentgenological and Radiological Institute, Pctrograd. Then until 1951 director, Physical Engineer Institute, USSR Academy of Sciences, founded from this department.
From 1932 director, Physico-Agronomical Institute. From 1951 head. Laboratory of Semiconductors, USSR Academy of Sciences (elevated to Institute of Semiconductors in 1954). 1909-1913 did research on quantum theory.
1910 experimentally proved that cathode rays exert a magnetic field. Specialized in mech properties of semiconductors. Studied mechanism of solid-state rectifiers and developed theory of plasticity and brittleness.
Devised methods for calibrating semiconductors, which led him to divide them into electronic and hole-type semiconductors. 1937 postulated new theory rectification. Established major school of Soviet physicists.
Lion member, American Academy of Sciences and Arts from 1928. Correspondent member, Goettingen Academy of Sciences from 1924. Correspondent member, Berlin Academy of Sciences from 1928.
Honorary Doctor of California (1928), Paris (1944) and Bucharest (1945) University, etc. Wrote several textbooks.
Religion discourages exploration of science and universe by suppressing curiosity, and denies its followers a broader perspective.
Marxism–Leninism as the only truth could not, by its very nature, become outdated.
Member, USSR Academy of Sciences from 1920. Communist Party member from 1942.