Background
Nabulsi, Basam E. was born on March 2, 1959 in Saint Louis, Missouri, United States.
Nabulsi, Basam E. was born on March 2, 1959 in Saint Louis, Missouri, United States.
Stevens Institute of Technology (Bachelor of Engineering, Chemistry Engineering, 1979. Mechanical Engineering, Chemistry Engineering, 1983). Fordham University (Juris Doctor, 1986).
Member, Fordham Urban Law Journal, 1985-1986.
Admitted to the bar, 1986, Connecticut. 1987, New York; 1988, United States. District Court, Southern and Eastern Districts of New New York
Registered to practice before United States.
Patent and Trademark Office. Member, Fordham Urban Law Journal, 1985-1986.
Member: Connecticut and American Bar Associations. New York Intellectual Property Law Association.
(Senior Counsel).
Connecticut and American Bar Associations. American Institute of Chemical Engineers. New York Patent, Trademark and Copyright Law Association (Member, Publications Committee, 1988-1989).
WESFACCA. (Patent Attorney).