Background
Esquivel, Agerico Liwag was born on June 5, 1932 in Manila. Son of Enrique Frias and Pacita Ramos (Liwag) E. Bachelor of Arts, Berchmans College, Manila, 1955, Master of Arts, 1956.
Esquivel, Agerico Liwag was born on June 5, 1932 in Manila. Son of Enrique Frias and Pacita Ramos (Liwag) E. Bachelor of Arts, Berchmans College, Manila, 1955, Master of Arts, 1956.
Doctor of Philosophy, Saint Saint Louis University, 1963.
Research associate Saint Saint Louis University, 1961-1963. Research scientist Research Institute Advanced Studies, Baltimore, 1963, Materials Research Laboratory, Martin Company, Orlando, Florida, 1964-1965. Senior research engineer Materials Technology laboratories, BoeingCo., Seattle, 1965-1971.
Postdoctoral fellow Advanced Research Projects Agency, University of Southern California, Los Angeles, 1971-1973.
Member technical staff Hughes Aircraft Company, Culver City, California, 1973-1976, Semiconductor Process andDevice Center, Texas Instruments, Incorporated., Dallas, 1976. Achievements include United States and Japan patents, issued and pending, submicron Complementary Metal Oxide Semiconductor process integration, development, device characterization, process/devicecomputer simulation, trench isolation, buried multilevel interconnect systems, nonvolatile memory devices.
Contributor papers to journals and procs. on X-ray, electron diffraction, radiation hardening, cathodoluminescence in Gallium Arsenide, deep level transient spectroscopy, x-ray lithography, high density nonvolatile memories, trench-isolated electronicallyprogrammable read-only memories, sub-0.25 micron Complementary MetalOxide Semiconductor (Complementary Metal Oxide Semiconductor) transistors and fabrication process, 0.18micron Complementary Metal Oxide Semiconductor logic transistor technology, Ultra Large Scale Integrated (Ultra large-scale integration) Complementary Metal Oxide Semiconductor device process integration and characterization. Author, co-author 42 technical publications, 21 science papers presented at international symposia in the United States, Japan and Europe.
Patentee in field National Science Foundation postdoctoralfellow, 1963.
Member Institute of Electrical and Electronics Engineers Electrical Devices Society (senior. Member), American Physical Society, Electrochemical Society, Sigma Xi, Pi Mu Epsilon.