Background
Aseev, Alexander Leonidovich was born on September 24, 1946 in Ulan-Ude, Russia. Son of Leonid Semenovich Aseev and Klavdiya Mitrofanovna Aseeva.
(The problem of the formation of interstitial atom cluster...)
The problem of the formation of interstitial atom clusters in Si and Ge crystals is treated in order to present useful results for the understanding of problems which may arise after implatation, thermal gettering, and thermal treatment of Si and Ge wafers of crystals.
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Aseev, Alexander Leonidovich was born on September 24, 1946 in Ulan-Ude, Russia. Son of Leonid Semenovich Aseev and Klavdiya Mitrofanovna Aseeva.
Master, Novosibirsk State University, Novosibirsk, 1968. Doctor of Philosophy, Institute Semiconductor Physics, Novosibirsk, 1975. Doctor of Science, Institute Semiconductor Physics, Novosibirsk, 1990.
Probationer-researcher Institute Semiconductor Physics, 1968—1969, junior research scientist, 1969—1979, senior research scientist, 1979—1986, head laboratory, 1986—1994, deputy director, 1994—1998, director, since 1998. Vice president, chair Siberian branch Russian Academy of Sciences, since 2008. Member science council Russian Academy of Sciences, Moscow, since 1987, International Science Center, Berlin, since 1986.
Member advisory board J.Crystal Research and Technology, Berlin, since 1994, Fizika i Technika Poluprovodnikov, St. Petersburg, since 1998, Nano- i mikrosistemnaya tehnika, Moscow, since 2000, Russian Nanotechs., Moscow, since 2006, Problems of Informatics, Novosibirsk, since 2008, Nano Technology Ekologiya Proizvodstod, St. Petersburg, since 2009.
(The problem of the formation of interstitial atom cluster...)
Member prezidium Siberian Branch Russian Academy of Sciences, 1998—2006. Member science council Novosibirsk State University, 2000—2006. Professor faculty Tomsk State University, 2006.
Member of Russian Academy of Sciences (academician).
Married Vera Nikolaevna Bliznyuk, September 13, 1968. 1 child Olga Alexandrovna Aseeva.