Background
Ahn, Byung Tae was born on December 22, 1953 in Gyungsan, GyungBuk, Republic of Korea.
Ahn, Byung Tae was born on December 22, 1953 in Gyungsan, GyungBuk, Republic of Korea.
Bachelor of Science in Materials Science and Engineering, Seoul National University, 1977. Master of Science in Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republis of Korea, 1979. Doctor of Philosophy in Materials Science and Engineering, Stanford University, California, 1988.
Junior researcher Electronics and Telecommunication Research Institute, Daejeon, Republic of Korea, 1979—1982. Senior research staff in Samsung Electronics Company, Semiconductor Research and Development Team, GiHung, Republic of Korea, 1991—1992. Professor, department materials science and engineering, since 1992.
Conference general secretary International PVSEC-12, Jeju, Republic of Korea, 2001. International advisory committee International Photovoltaic Science and Engineering Conference, since 2004. Conference program chair IUMRS-International Cooperation Administration, International Conference Asia, Jeju, Republic of Korea, 2006.
Head, department materials, engineering Korea Advanced Institute of Science and Technology, 2007. Director Center Inorganic Photovoltaic Materials supported by Korea MinistryEdn., Science, and Technology,Korea Advanced Institute of Science and Technology, since 2008. Conference program chair International PVSEC-19, Jeju, 2009.
President, materials Research Society Korea, Seoul, 2010.
Member of Korean Republican International Photovoltaic Science and Engineering Conference (international advisory member), Materials Research Society Korea, Electrochemical Society, Materials Research Society.