Background
Ueda, Dasiuke was born on August 20, 1954 in Oita, Japan. Son of Manabu and Chizuko Ueda.
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Dasiuke Ueda
Edit Profileeducator electronics executive
Dasiuke Ueda, Japanese electronics executive, educator. Achievements include invention of trench power Metal–oxide–semiconductor field-effect transistor; invention of integration of Barium Strontium Titanate capacitor on compound semiconductors; invention of gate injection transistor; discovery of temperature conpensation of polar semicondcutor by choosing crystal orientation. Recipient Okochi Industrial prize, 1994, Okochi Memorial prize, 1996.
Education
Doctor of Philosophy, Osaka University, Japan, 1987.
Career
Director Semiconductor Device Research Center, Takatsuki, since 2002. Visiting professor Nagoya Institute of Technology, Japan, 1999—2008.
Achievements
Membership
Fellow: Institute of Electrical and Electronics Engineers, Institute Electronics, Information and Communication Engineers.
Connections
Married Katsue Ueda, August 10, 1984. 1 child Tetsushi.
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Born
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Nationality
Japanese
Education
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1987