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Elijah Vladimirovich Karpov Edit Profile

process engineer

Elijah Vladimirovich Karpov, Russian, American process engineer. Achievements include patents in field; areas of expertise include Chemical Vapor Deposition, Si, Gallium Arsenide semiconductor devices/physics, semiconductor technology. Member Materials Research Society, Microscopy Society of America, Vacuum Society of America.

Background

Karpov, Elijah Vladimirovich was born on March 30, 1964 in Moscow. Came to the United States, 1991. Son of Vladimir and Ludmila (Babchinitser) Karpov.

Education

Master of Science in Electrical Engineering, Moscow Institute Steel & Alloys, 1986. Doctor of Philosophy in Engineering, University Minnesota, 1996.

Career

Research engineer P.N. Lebedev Institute Physics, Moscow, 1986-1991. Research assistant chemical engineering department University Minnesota, Minneapolis, 1991-1996. Process development engineer Mitsubishi Silicon American, Salem, Oregon, 1996-1999.

Senior process engineer Intel Corporation, Santa Clara, California, since 1999.

Achievements

  • Achievements include patents in field. Areas of expertise include Chemical Vapor Deposition, Si, Gallium Arsenide semiconductor devices/physics, semiconductor technology.

Works

  • Other Work

    • Contributor articles to Journal Vacuum Science and Technology, Applied Physics, Applied Physics Letters, Applied Surface Science, others.

Membership

Member Materials Research Society, Microscopy Society of America, Vacuum Society of America.

Connections

father:
Vladimir Karpov

mother:
Ludmila (Babchinitser) Karpov