Doctor Harold M. Manasevit was an American materials scientist
Education
Manasevit received a Bachelor of Surgery Degree in Chemistry from Ohio University in 1950, Master of Surgery in Chemistry from Pennsylvania State University in 1951, and Doctor of Philosophy in Physical Inorganic Chemistry from the Illinois Institute of Technology in 1959.
Career
He then joined the United States. Borax Research Corporation in Anaheim, California, but in 1960 left for the North American Aviation Company. In 1983 he joined Thompson Ramo Wooldridge as a Senior Scientist. Manasevit"s career has focused on Chemical Vapor Deposition (Chemical Vapor Deposition) of materials.
In 1963 he was the first to document epitaxial growth of silicon on sapphire, and in 1968 was the first to publish on metalorganic chemical vapor deposition (Metalorganic chemical vapour deposition) for the epitaxial growth of Gallium Arsenide.
He has developed numerous Chemical Vapor Deposition techniques for etching insulators and for producing semiconductor and superconducting films on insulators. Stated by Russel Doctorate. Dupuis, "In the mid-1970s, Rockwell International Electronics Operations (Anaheim California) was developing the guidance systems for Minuteman missiles.
lieutenant was necessary to design a system with radiation-hardened circuits so the missiles could go through these nuclear bomb clouds. One key feature of these circuits was the need for stability in the conductivity of the substrate.
Silicon was the technology of choice, but it suffered when exposed to large amounts of radiation.
So he developed a technology called silicon on sapphire, or SOS, which was used in the Minuteman Missiles. He also developed an analogous process for the growth of gallium arsenide on sapphire." ---BN.