Background
Amano was born in Hamamatsu, Japan on September 11, 1960.
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Hiroshi Amano
Edit Profile天野 浩
Education
Nagoya University.
Career
He received his Bachelor of Engineering, Master of Engineering and Delaware degree in 1983, 1985 and 1989, respectively, from Nagoya University. From 1988 to 1992, he was a research associate at Nagoya University. In 1992, he moved to Meijo University, where he was an assistant professor
From 1998 till 2002, He was an associate professor
In 2002, he became a professor In 2010, he moved to the Graduate School of Engineering, Nagoya University, where he is currently a professor
He joined Professor Isamu Akasaki"s group in 1982 as an undergraduate student. Since then, he has been doing research on the growth, characterization and device applications of group III nitride semiconductors, which are well known as materials used in blue light-emitting diodes.
In 1985, he developed low-temperature deposited buffer layers for the growth of group III nitride semiconductor films on a sapphire substrate, which led to the realization of group-III-nitride semiconductor based light-emitting diodes and laser diodes.
In 1989, he succeeded in growing p-type Gallium nitride and fabricating a p-n-junction-type Gallium nitride-based Ultraviolet/blue light-emitting diode for the first time in the world.
