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Hisao Katto Edit Profile

Semiconductor engineer

Hisao Katto, Japanese Semiconductor engineer. Achievements include study of metal–oxide–semiconductor device characteristics and reliability physics; leadership in design of soft-error free DRAMs and reliability design of VLSIs; invention of soft-error free Scott Ray and Sam structure. Recipient Special President award Hitachi, 1980, Inventor award Kanto District Invention Association, 1994.

Background

Katto, Hisao was born on November 1, 1941 in Tokyo. Son of Taro and Sae (Fujisaki) Katto.

Education

Bachelor of Science, University Tokyo, 1965. Master of Science, University Tokyo, 1967. Doctor of Philosophy, University Tokyo, 1976.

Career

Researcher Central Research Laboratory Hitachi, Kokubunji, Tokyo, 1967-1978, senior engineer Musashi works Kodaira, 1978-1989, senior engineer device development center Ome, 1989-1996. Visiting research associate department electrical engineering University Illinois, Urbana, 1971-1972. Professor department electrical engineering Science University Tokyo, 1996—2002.

Professor department electronic system engineering, since 2002.

Achievements

  • Achievements include study of metal–oxide–semiconductor device characteristics and reliability physics. Leadership in design of soft-error free DRAMs and reliability design of VLSIs. Invention of soft-error free Scott Ray and Sam structure.

Membership

Member Institute of Electrical and Electronics Engineers, Japan Society Applied Physics.

Connections

Married Akiko Watanabe, November 12, 1967. Children: Tetsuo, Masao.

father:
Taro Katto

mother:
Sae (Fujisaki) Katto

spouse:
Akiko Watanabe

child:
Masao Katto

child:
Tetsuo Katto