Background
Casey, Horace Craig was born on December 4, 1934 in Houston, Texas, United States. Son of H.c. and Mae (Walls) Casey.
(A detailed, modern introduction to semiconductors made in...)
A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Figures and examples based on realistic device parameters are used to illustrate important concepts. The book uses spice tools to analyze complex devices. Design specifications are stressed in building or modeling complicated semiconductor devices.
http://www.amazon.com/gp/product/0471171344/?tag=2022091-20
Casey, Horace Craig was born on December 4, 1934 in Houston, Texas, United States. Son of H.c. and Mae (Walls) Casey.
Bachelor of Science in Electrical Engineering, Oklahoma State University, 1957; Master of Science in Electrical Engineering, Stanford University, 1959; Doctor of Philosophy, Stanford University, 1964.
Development engineer, Hewlett-Packard, Palo Alto, California, 1957-1962; member technical staff, Bell laboratories, Murray Hill, New Jersey, 1964-1979; department chairman electrical engineering, Duke U., Durham, North Carolina, 1979-1994; professor electrical engineering, Duke U., Durham, North Carolina, since 1979. Member Department of Defense Advisory Group Electron Devices, Washington, 1975-1979. Board directors Acme Elec., 1984-1991.
(A detailed, modern introduction to semiconductors made in...)
(part a of heterostructure laser series)
Fellow Institute of Electrical and Electronics Engineers (president Electron Devices Society 1988-1989, editor centennial issue transactions on Electron Devices 1984). Member American Physical Society.
Married Jean Anne Merritt, June 14, 1960 (divorced1983). Children: Anne, Michael. Married Jacqueline Lucas, January 22, 1983.