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Jing Zhang Edit Profile

Research and development engineer

Jing Zhang, Chinese research and development engineer. Achievements include being the first Doctor of Philosophy holder in the United States specializing in spin dependent tunneling (SDT) devices for potential ultrahigh density data storage applications; pioneer work on voltage and temperature dependence of magnetoresistance in SDT junctions. Member Institute of Electrical and Electronics Engineers, Sigma Xi.

Background

Zhang, Jing was born on October 10, 1968 in Beijing. Came to the United States, 1991.

Education

Bachelor of Science in Electronic Engineering, Tsinghua University, Beijing, 1991. Master of Science in Physics, Rutgers University, 1993. Doctor of Philosophy in Electrical and Computer Engineering, Carnegie Mellon University, 1998.

Career

Research assistant Carnegie Mellon University, Pittsburgh, 1993-1997. Senior research and development engineer Read-Rite Corporation, Milpitas, California, 1998-2000, engineering manager, since 2001.

Achievements

  • Achievements include being the first Doctor of Philosophy holder in the United States specializing in spin dependent tunneling (SDT) devices for potential ultrahigh density data storage applications. Pioneer work on voltage and temperature dependence of magnetoresistance in SDT junctions.

Works

  • Other Work

    • Contributor articles to professional journals.

Membership

Member Institute of Electrical and Electronics Engineers, Sigma Xi.