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Ming-Huang Huang Edit Profile

Engineer , Materials scientist

Ming-Huang Huang, Chinese, American engineer, materials scientist. Achievements include research in nanomechnical architecture of a bi-layer strained thin film; patents pending for power trench Metal–oxide–semiconductor field-effect transistor with a heavily doped SiGe heavy-body structure. Recipient Gold award of poster presentation, University Utah, 2002. Member of Materials Research Society, Am, Physical Society, Phi Kappa Phi (associate).

Background

Huang, Ming-Huang was born on September 20, 1974 in Taoyuan, Taiwan. Arrived in the United States, 2000. Son of Tien-Song Huang.

Education

Master's, University Utah, Salt Lake City, 2003. Doctor of Philosophy, University Utah, Salt Lake City, 2006.

Career

Research assistant University Utah, Salt Lake City, 2000—2005. Process development engineer Fairchild Semiconductor Inc., West Jordan, 2006—2007. Research associate University Wisconsin, Madison, since 2007.

Assistant scientist U W Madison, since 2009.

Achievements

  • Achievements include research in nanomechnical architecture of a bi-layer strained thin film. Patents pending for power trench Metal–oxide–semiconductor field-effect transistor with a heavily doped SiGe heavy-body structure.

Membership

Member of Materials Research Society, Am, Physical Society, Phi Kappa Phi (associate).

Connections

father:
Tien-Song Huang. Huang