Background
Rahimo, Munaf Thamin was born on July 28, 1967 in Edinburgh, Scotland, United Kingdom. Son of Thamin Ayoub Rahimo and Alia A. Atto.
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Munaf Thamin Rahimo
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Munaf Thamin Rahimo, British engineer, researcher. Achievements include design of Power Semicondutor Device Design; development of Development of Power Semiocnductor Devices; invention of New power Diode and IGBT design concepts; discovery of Power device and circuit interaction; patents pending for New IGBT cell design. Scholar Research Scholar, Staffordshire University, 1993.
Education
Bachelor of Science in Electrical and Electronic Engineering, Baghdad University, Bagdad - Iraq, 1985—1990. Master of Science in Electrical Electronic Engineering (honorary), Staffordshire Universtiy, Stafford, United Kingdom, 1992—1993. Doctor of Philosophy, Staffordshire Universtiy, Stafford, United Kingdom, 1993—1996.
Career
Development engineer General Electric Company PLESSEY Semiconductors, Lincoln, United Kingdom, 1996—1999. Senior development engineer SEMELAB Plc, Lutterworth, United Kingdom, 1999—2001. R&d project manager ABB Switzerland Ltd, Lenzburg, Switzerland, since 2001.
Achievements
Interests
Connections
Married Susana Alonso Garcia, June 12, 1971. 1 child Lorena Maria.
Education
Career
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1996 - 1999
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1999 - 2001
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2001