Background
Sze, Simon M. was born on March 21, 1930 in Nanking, China.
(This completely reorganized edition of the classic refere...)
This completely reorganized edition of the classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. Integrates nearly 1,000 references to important original research papers and review articles, more than 650 high-quality technical illustrations, and 25 tables of material parameters for device analysis.
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(The Third Edition of the standard textbook and reference ...)
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes:* A complete update of the latest developments* New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more* Materials completely reorganized* Problem sets at the end of each chapter* All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.
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(Semiconductor Devices: Physics and Technology, Third Edit...)
Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
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Sze, Simon M. was born on March 21, 1930 in Nanking, China.
Bachelor of Science, National Taiwan University, 1957. Master of Science, University Washington, 1960. Doctor of Philosophy, Stanford University, 1963.
Engineer Bell Laboratory, 1963—1989. Professor electronic engineering National Chiao Tung University, 1990, national chair professor. President National Nano Device Laboratory, Hsinchu, Taiwan.
Visiting professor University Cambridge, Delft University, University Hong Kong, Suchou University, Stanford University, Swiss Federal Institute of Technology.
(This completely reorganized edition of the classic refere...)
(The Third Edition of the standard textbook and reference ...)
(Semiconductor Devices: Physics and Technology, Third Edit...)
Fellow: Institute of Electrical and Electronics Engineers (life J. J. Ebers award). Member: Chinese Academy Engineering, Academia Sinica, United States National Academy Engineering.