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Qingqing Liang
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Qingqing Liang, Chinese electronics engineer. Achievements include patents pending for new semiconductor device structure; first to radio-frequency circuit design methodology; first to microwave devices or circuits characterization methodology; first to device nonlinear modeling methodology; development of next generation high performance logic device. Fellow, Auburn University, 2001-2002.
Education
Bachelor of Science honours, Fudan University, Shanghai, China, 1997; Master of Science, Fudan University, Shanghai, China, 2000; Doctor of Philosophy, Georgia Institute of Technology, Atlanta, 2005.
Career
Graduate research assistant Georgia Institute of Technology, Gatech Electrical Design Center, Atlanta, 2002—2005. Semiconductor device engineer International Business Machines Corporation Semiconductor & Research Center, Hopewell Junction, New York, since 2005. Graduate research assistant Fudan University, Integrated Circuit Technology Computer-Aided-Design Laboratory, Shanghai, 1997—2000, Auburn University, Alabama Microelectronic Science & Technology Center, Alabama, 2000—2002.
Achievements
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Achievements include patents pending for new semiconductor device structure. First to radio-frequency circuit design methodology. First to microwave devices or circuits characterization methodology.
First to device nonlinear modeling methodology. Development of next generation high performance logic device.
Membership
Member of Silicon Radio Frequency Symposium Committee, Semiconductor Research Corporation, Institute of Electrical and Electronics Engineers.
Connections
Married
