Background
Larrabee, Robert Dean was born on November 29, 1931 in Flushing, New York, United States. Son of William Morse and Dorothy Dean (Smock) Larrabee.
(viii The growing use of NTD silicon outside the U. S. A. ...)
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
http://www.amazon.com/gp/product/1461296757/?tag=2022091-20
(viii The growing use of NTD silicon outside the U. S. A. ...)
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
http://www.amazon.com/gp/product/0306415046/?tag=2022091-20
Larrabee, Robert Dean was born on November 29, 1931 in Flushing, New York, United States. Son of William Morse and Dorothy Dean (Smock) Larrabee.
Bachelor of Science in Electrical Engineering and Master of Science in Mathematics summa cum laude, Bucknell U., 1953; Master of Science, Massachusetts Institute of Technology, 1955; Doctor of Science in Physics, Massachusetts Institute of Technology, 1957; Master of Business Administration, Rider College, 1976.
Member technical staff, Radio Corporation of America laboratories, Princeton, New Jersey, 1957-1972; senior engineer, Radio Corporation of America Advanced Technology Laboratory, Camden, New Jersey, 1972-1976; physicist, National Bureau Standards (now National Institute Standards and Technology), Gaithersburg, Maryland., 1976-1980; group leader, National Bureau Standards (now National Institute Standards and Technology), Gaithersburg, Maryland., since 1980. Instructor Bucknell U., Lewisburg, Pennsylvania, summer 1953. Lecturer U. Maryland., College Park, 1980-1981.
(viii The growing use of NTD silicon outside the U. S. A. ...)
(viii The growing use of NTD silicon outside the U. S. A. ...)
Advisor Explorer Post Boy Scouts American, Princeton, 1970-1976. Member American Association for the Advancement of Science, Institute of Electrical and Electronics Engineers (senior), American Physical Society, Sigma Xi, Tau Beta Pi.
Married Ramona Allien Rogers, August 29, 1953. Children: David Allan, Susan Kay.