Background
Lapshin, Rostislav Vladimirovich was born on June 30, 1967 in Belgorod, Russia. Son of Vladimir Victorovich Lapshin and Emma Yurievna Ivanova.
Lapshin, Rostislav Vladimirovich was born on June 30, 1967 in Belgorod, Russia. Son of Vladimir Victorovich Lapshin and Emma Yurievna Ivanova.
Master of Science, Moscow State Technology University, Russian Federation, 1990. Doctor of Philosophy, Institute Physical Problems, Zelenograd, Russian Federation, 2002.
Engineer Rhythm ad hoc creative team Moscow State Technology University, 1988—1989. Researcher Delta Microelectronics and Nanotech. Research Institute, 1990—1996.
Staff scientist Institute Physical Problems, since 1996. Referee Review Science Instruments journal, United States, 2007.
Achievements include original Research and Development in scanning probe microscopy and nanotechnology, in particular, a fast-acting scanning tunneling microscope, a model approximating hysteresis nonlinearity of a probe microscope scanner in nanometer range. First experimental demonstrations at room temperature of probe tracking by single atoms of a crystal surface, a low-noise scanning tunneling spectroscopy localized precisely on a single surface atom, high precision distance measurement between two surface atoms with a scanning tunneling microscope. Patents in field.
Fellow: Russian Society Scanning Probe Microscopy and Nanotech. Member: New York Academy of Sciences.
