Background
Shapoval, Sergei Yur'evich was born on December 27, 1949 in Dnepropetrovsk, Ukraine. Son of Yurii Borisovich Demidenko and Nadezhda Ivanovna Shapoval.
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Sergei Yur'evich Shapoval
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Sergei Yur'evich Shapoval, Russian physicist, researcher. Achievements include research on cubic boron nitride deposition by microwave Early Career Researchers plasma; observation of conductance quantization at room temperature; application of the Early Career Researchers plasma for wide band gap transistor technology. Grantee Swedish Royal Academy of Sciences, 1988-2000, United States Naval Research Office, since 2001.
Education
Master Radioengring., Institute Radioengring./Electronic, Moscow, 1975. Doctor of Philosophy Physico-Technology Institute, Russian Academy of Sciences, Moscow, 1989.
Career
Engineer Institute Mineralogy, Alexandrov, Russia, 1969-1971, Plant of Semiconductor Devices, Alexandrov, 1971-1976. Chief technologists Research-Industrial Corporation, Novosibirsk, Russia, 1976-1986. Head laboratory Institute Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia, since 1986.
Consultant Institute Vukkanology, Russian Academy of Sciences, Petropavlovsk-Kamchatskii, Russia, 1971-1973, Microsci. Inc., Norwell, Massachusetts, 1988-1993.
Achievements
Membership
Senior lieutenant Union of the Soviet Socialist Republics Army, 1979-1981.
Connections
Married Elena Nikolaevna Nosova, October 9, 1971. 1 child, Galina.
Education
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1975
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1989
Career
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1969 - 1971
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1971 - 1976
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1976 - 1986
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1986