Background
Plyatsko, Sergyi Volodymyr was born on March 9, 1953 in Petropavlovsk-Kamchatski, Russia. Son of Volodymyr Vasyl and Vira Myhailo Plyatsko.
Plyatsko, Sergyi Volodymyr was born on March 9, 1953 in Petropavlovsk-Kamchatski, Russia. Son of Volodymyr Vasyl and Vira Myhailo Plyatsko.
Bachelor, Vinnitski Polytechnic college, Vinnitsa, Ukraine, 1972. Master of Philosophy, Ohienko Kamenets-Podolsky State University, Ukraine, 1978. Doctor of Philosophy, Institute Semiconductor Physics Academy of Sciences Ukraine, Kyiv, 1984.
Doctor of Philosophy in Physics, Semiconductors Institute Physics National Academy of Sciences Ukraine, 1985.
Junior researcher Institute Semiconductor Physics Academy of Sciences Ukraine, 1984—1985, researcher, 1985—1987, senior researcher, since 1987.
Achievements include invention of non-destructive method control change of free of charge in narrow gap PbSnTe semiconductors compound. Invention of non-destructive method surface treatment of semiconductor substrate for fabricated International Rectifier optoelectronics devices. Invention of methods of epitaxial growth of high quality semiconductors thin films, semiconductors heterojunctions and quantum-size structures on cold substrate.
Research in behavior of acceptor and donor impurities in solid solution II-VI and IV-VI binaries and ternaries bulk and thin films semiconductors compound were investigated. Research in transformation and redistribution of the intrinsic and impurities defects in the semiconductors and homogenization of electronic structure of semiconductors in the International Rectifier laser wave. Research in parameters of the spin Hamiltonian for Mn and Eu ions in the lattice of narrow-gap solid solution IV-VI semiconductors compound were obtained.
Indiana observer Committee Voters Ukraine, Kyiv, 2004—2005.
Married Svitlana Kornyi Lyubaya, September 3, 1957. Children: Lyubov Sergyi, Nadiya Sergyi.