Background
Cai, Shujun was born on November 21, 1964 in Nanxian, Hunan, China.
researcher electrical engineer
Cai, Shujun was born on November 21, 1964 in Nanxian, Hunan, China.
Bachelor of Science, Wuhan University, China, 1985. Master Semiconductor Engineering, Hebei Semiconductor Research Institute, Shijiazhuang, China, 1988. Postgraduate, University of California at Los Angeles, since 1998.
Engineer Hebei Semicondr. Research Institute, 1988-1990, director research and development laboratory, 1991-1996. Visiting scholar electrical engineering department University of California at Los Angeles, 1996-1998.
Research in S-Band 100W Si microwave power transistor. High Performance AlGaN/Gallium nitride HEMT with improved ohmic contacts. AlGaN/Gallium nitride undoped channel heterostructure field effect transistor with Fmax of 107 GHz.
Senior research engineer Ministry Electronic Industry of China, Beijing, since 1992.
Member Institute of Electrical and Electronics Engineers (student member), Chinese Institute Electronics (senior ).
P. Jixiang Cai and Guifang Tsao. Married Yanling Chen, September 16, 1988. Children: Xueqing, Maylynn.