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Simon M. Sze Edit Profile

Engineer

Simon M. Sze, Chinese engineer. Achievements include invention of the floating-gate semiconductor nonvolatile memory such as EEPROM and the flash memory. Recipient Sun Yet-sen award, National Science and Technology prize. Fellow: Institute of Electrical and Electronics Engineers (life J. J. Ebers award); member: Chinese Academy Engineering, Academia Sinica, United States National Academy Engineering.

Background

Sze, Simon M. was born on March 21, 1930 in Nanking, China.

Education

Bachelor of Science, National Taiwan University, 1957. Master of Science, University Washington, 1960. Doctor of Philosophy, Stanford University, 1963.

Career

Engineer Bell Laboratory, 1963—1989. Professor electronic engineering National Chiao Tung University, 1990, national chair professor. President National Nano Device Laboratory, Hsinchu, Taiwan.

Visiting professor University Cambridge, Delft University, University Hong Kong, Suchou University, Stanford University, Swiss Federal Institute of Technology.

Achievements

  • Achievements include invention of the floating-gate semiconductor nonvolatile memory such as EEPROM and the flash memory.

Membership

Fellow: Institute of Electrical and Electronics Engineers (life J. J. Ebers award). Member: Chinese Academy Engineering, Academia Sinica, United States National Academy Engineering.