Background
Nabatame, Toshihide was born on March 24, 1962 in Hitachi, Ibaraki, Japan. Son of Kisaburou and Sachie Nabatame.
Nabatame, Toshihide was born on March 24, 1962 in Hitachi, Ibaraki, Japan. Son of Kisaburou and Sachie Nabatame.
Bachelor of Engineering, Tohoku University, Japan, 1985. Master of Engineering, Tohoku University, Japan, 1987. Doctor of Philosophy, Tokyo Institute of Technology, Japan, 1994.
Researcher Hitachi Research Laboratory, Hitachi Ltd., Japan, 1987—1996, senior researcher, 1998—2002. Senior engineer Process Development Department, Renesas Technology Corporation, Itami, Japan, since 2003. Chief researcher Nagoya Division International Supercondctivity Technology Center, Nagoya, Aichi, Japan, 1991—1994.
Guest professor The Research and Development Center, Kagoshima University, Kagoshima, Japan, 2003—2004. Group sub-leader High-k Gate Stack Gr of MIRAI Project, Tsukuba, since 2001.
Married Iku Satou, May 25, 1991. 1 child Nozomi.