Background
Lin, Xi-Wei was born on December 18, 1961 in Gejiu, Yunnan, China. Son of Heqing Lin and Lizhi Shen. came to the United States, 1987.
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Xi-Wei Lin
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Xi-Wei Lin, Chinese Electronics engineer. Achievements include invention of several techniques in sub-micron integrated circuit technology; first to synthesize Gallium Nitride in Gallium Arsenide via ion beam technique for optical applications; numerous contributions in areas of ion beam-material interaction, interface, defects, electronic device processing. member Institute of Electrical and Electronics Engineers, Materials Research Society.
Education
Bachelor of Science, Beijing University, 1982. Master of Science, University Paris, Orsay, France, 1984. Doctor of Philosophy, University Paris, Orsay, France, 1987.
Career
Research assistant University Paris, Orsay, 1984-1987. Research associate Northwestern University, Evanston, Illinois, 1987-1991. Staff scientist Lawrence Berkeley (California) Laboratory, 1991-1995.
Principle engineer Very-large-scale integration Technology Inc., San Jose, California, since 1995. Visiting scholar center research and energy University Quebec (Canada), 1985. Visiting scholar Institute Physics University Federal Rio Grande Do Sul, Porto Alegre, Brazil, 1994.
Achievements
Membership
Member Institute of Electrical and Electronics Engineers, Materials Research Society.
Connections
Married Jiawen Wang, November 2, 1989.
