Anubhav Saxena

Background

Anubhav was born in 1974.

Education

Master in Technology, Indian Institute of Technology, Delhi, 1998; Doctor of Philosophy, Indian Institute of Technology, Delhi, 2002.

Career

Researcher Nara Institute of Science and Technology, Japan, 2002—2004; program leader Momentive Performance Materials, Bangalore, India, since 2004; Contributor articles to professional journals.

Achievements

• Patents for halogen ion detecting element material produced using fluorinated alkyl silicon macromolecular compound.

• Patents for material for nitro compound detection element and method of detecting nitro compound.

• Patents for optically active fluoroalkyl polysilane, its manufacturing method and using method and optically active fluoroalkyl silane compound.

• Patents for method for fixing polysilane.

• Patents for method for orienting and arranging polysilane.

• Achievements include patents for halogen ion detecting element material produced using fluorinated alkyl silicon macromolecular compound; patents for material for nitro compound detection element and method of detecting nitro compound; patents for optically active fluoroalkyl polysilane, its manufacturing method and using method and optically active fluoroalkyl silane compound; patents for method for fixing polysilane; patents for method for orienting and arranging polysilane

Membership

• Council of Scientific and Industrial Research India , India

  1999 - 2002

• Crest fellow, Japan Science and Technology

  2002 - 2004