Education
Doctor of Philosophy, University Tokyo, 1976.
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Hajime Asahi
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Hajime Asahi, physics professor, researcher. Achievements include first to make InGaAlP and fabrication of InGaAlP red wavelength laser diodies; first to fabricate of InGaAs/InP laser diodes by molecular beam epitaxy; research in temperature insensitive wavelength TlInGaAs/InP laser diodes; first to observe the MBE growth of diluted magnetic semicondcutor GaCrN and obervation of room temperature ferromagnetism.
Career
Research engineer Nippon Telegraph and Telephone Laboratories, 1976—1987. Associate professor Osaka University, 1987—2001, professor, since 2001.
Achievements
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Achievements include first to make InGaAlP and fabrication of InGaAlP red wavelength laser diodies. First to fabricate of InGaAs/InP laser diodes by molecular beam epitaxy. Research in temperature insensitive wavelength TlInGaAs/InP laser diodes.
First to observe the MBE growth of diluted magnetic semicondcutor GaCrN and obervation of room temperature ferromagnetism.
Membership
Fellow: Japan Society Applied Physics (JJAP Contribution award). Member: American Vacuum Society, Institute Electrical Engineers, Information and Communication Engineers Japan, Surface Science Society Japan, Physical Society Japan.
