Nikolay Poklonskii
Nikolai Alexandrovich Poklonski was born on 14 August 1949 in the village of Gorodok in the Uzdenski area of the Minsk region of Belarus. He has maintained his professional and academic association with Belarusian State University throughout his career, where he developed from a physics student and postgraduate researcher into a professor and senior specialist in semiconductor physics and nanoelectronics.
Poklonski graduated from the Faculty of Physics of Belarusian State University in 1971 and subsequently pursued postgraduate study at the same institution. He defended a PhD thesis in 1982 and completed a doctoral thesis in 2001 entitled “Static screening and hopping transport of charges in semiconductors.” His education and research training established the foundation for his later work in semiconductor transport, condensed-matter physics, and nanoelectronics.
Poklonski began his professional career in 1971 as a researcher at the Research Institute of Applied Physical Problems of Belarusian State University, where he worked in the Laboratory of Electronic Methods of Experimental Physics until 1993. From 1993 he continued at Belarusian State University in the Department of Semiconductor Physics and Nanoelectronics, becoming a professor and later serving as a corresponding member of the National Academy of Sciences of Belarus. His research has addressed static screening and hopping migration of electrons and holes in covalent semiconductor crystals, semiconductor charge transport, electron-spin-resonance studies of ferromagnets and diamond, carbon nanostructures, carbon nanotubes, graphene, and nanoelectronic devices. He has supervised the defense of seven PhD theses. His documented achievements include patents concerning an inverted heterojunction bipolar device with an undoped amorphous-silicon layer; theoretical and experimental studies of hopping migration in semiconductor lattices; measurements of the demagnetization field at ferromagnetic surfaces by electron-spin-resonance methods; research on the inversion of electron-spin-resonance signals from nitrogen atoms in diamond at room temperature; and predictions concerning the carbon star-shaped molecule C10.
Patents for an inverted heterojunction bipolar device having an undoped amorphous silicon layer.
Research on the theory of hopping migration of electrons and holes over point defects of the lattice in covalent semiconductor crystals.
Research measuring the demagnetization field on the surface of ferromagnets using electron-spin-resonance methods.
Research demonstrating at room temperature the inversion of the electron-spin-resonance signal from nitrogen atoms in diamond crystals.
Prediction of the existence of the new carbon star-shaped molecule C10.
Supervision of seven successfully defended PhD theses.
(Co-authored Chapter 9 in Perspective of Carbon Nanotubes,...)
2019(Co-authored theoretical study of weakly temperature-depen...)
2023(Co-authored research article on the influence of the Peie...)
2011(Co-authored study of direct-current conductivity and carr...)
2026(Co-authored Physical Review Materials study of the struct...)
2018(Co-authored research on calculating the activation energy...)
2025(Co-authored Physical Review B article analyzing the inter...)
2012(Co-authored study of the quantum-chemical formation of a ...)
2015Poklonski is a corresponding member of the National Academy of Sciences of Belarus. His professional work has also involved sustained participation in the research community of Belarusian State University and collaborative projects with physicists and materials scientists in Belarus and abroad.
The PRABOOK record identifies Yadviga as Poklonski’s mother and Alexandr as his father. His principal professional connection has been with Belarusian State University, where he studied, conducted research, taught, supervised doctoral candidates, and continued collaborative scientific work.
