Background
Fritzsche, Hellmut was born on February 20, 1927 in Berlin. Son of Carl Hellmut and Anna (Jordan) Fritzsche. came to the United States, 1952.
physicist university professor
Fritzsche, Hellmut was born on February 20, 1927 in Berlin. Son of Carl Hellmut and Anna (Jordan) Fritzsche. came to the United States, 1952.
He earned his Doctor of Philosophy from Purdue University in 1954 where in the same year he became Instructor and in 1955 Assistant Professor. Fritzsche trained 35 Doctor of Philosophy students.
He came to the United States of America on a one-year Smith-Mundt fellowship in 1950/51. After receiving his Diplom in physics from the University of Göttingen in 1952 he returned to the United States of America. In 1957 he moved to the University of Chicago, where in 1963 he became a full professor and in 1996 retired. During his career at the University of Chicago he was director of its Materials laboratory 1973-1977 and chairman of its Physics department 1977-1986.
During his chairmanship he planned and oversaw the building of the Kersten Physics Teaching Center.
Foreign twenty five years Fritzsche served on the University of Chicago Advisory Committee for the Encyclopaedia Britannica and during the last 7 years as its chairman. The discovery and exploration of a new conduction process in semiconductors at very low temperatures: impurity conduction, the hopping of charge carriers between the random distribution of impurity atoms.
The elucidation of the metal-insulator transition of semiconductors. The use of transmutation doping of some semiconductors: the transmutation of host atoms into doping atoms by the nuclear capture of thermal neutrons.
The first use of Synchrotron Radiation as a light source resulting in a study of far ultraviolet spectra of solids and their electronic structure.
The experimental and theoretical exploration of amorphous semiconductors discovered by Stanford R. Ovshinsky and their use in solid state electronic devices and solar panels. Editor: Amorphous Silicon and related materials, Parts A, B, World Scientific 1989 Editor: Transport, correlation and structural defects, World Scientific 1990 Editor with David Adler: Localization and metal-insulator transitions, Plenum Press 1985 (Volume(s) 3 a Festschrift for Nevill Francis Mott) Electronic phenomena in amorphous semiconductors, Annual Review of Material Science, Volume(s).2, 1972, pp. 697–744 Editor with Brian Schwartz: Stanford R. Ovshinsky - the science and technology of an American genius, World Scientific 2008.
American Physical Society]
Fritzsche has been a vice president and board member of Energy Conversion Devices, Incorporated. since 1969 and a member of the board of directors of United Solar Systems Corporation from 1993 to 2003. Honorary Professor and member of the Chinese Academy of Sciences, 1985.
Married Sybille Charlotte Lauffer, July 5, 1952. Children: Peter Andreas, Thomas Alexander, Susanne Charlotte, Katharina Sabine.