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Hidekazu Tsuchida Edit Profile

research scientist

Hidekazu Tsuchida, Japanese research scientist. Member of Institute Electrical Engineers Japan, Japan Society Applied Physics.

Background

Tsuchida, Hidekazu was born on December 26, 1967 in Tokyo. Son of Kazuo and Shigeko Tsuchida.

Education

Bachelor, Nagaoka University of Technology, Niigata, Japan. Master, Nagaoka University of Technology, Niigata, Japan, 1992. Doctor, Nagaoka University of Technology, Niigata, Japan, 1999.

Career

Senior research scientist Central Research Institute of Electric Power Industry, Nagasaka, Japan, since 1992.

Achievements

  • Achievements include development of high-speed and high-quality 4H-Silicon Carbide epitaxial growth. Discovery of shrinkage of shockley stacking faults in 4H-Silicon Carbide by annealing. Discovery of formation of frank-type faults in 4H-Silicon Carbide epitaxial growth.

    Invention of h-termination technique for Silicon Carbide(0001) and (000-1) surfaces by hydrogen annealing. Invention of Chemical Vapor Deposition technique to close micropipe defects in Silicon Carbide. Invention of c-ion implantation technique to eliminate C-vacancy related defects in Silicon Carbide.

Works

  • Other Work

    • Contributor articles to professional journals.

Membership

Member of Institute Electrical Engineers Japan, Japan Society Applied Physics.

Connections

Married Kimie Tsuchida, April 11, 1967.

father:
Kazuo Tsuchida

mother:
Shigeko Tsuchida

spouse:
Kimie Tsuchida