Background
Dabrowski, Jaroslaw was born on September 29, 1958 in Warsaw, Poland. Son of Wieslaw Antoni Dabrowski and Julitta Maria Dabrowska.
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Jaroslaw Dabrowski
Edit ProfileEducation
Master of Science, Warsaw University, 1982. Doctor of Philosophy, Institute of Physics of the Polish Academy of Science, Warsaw, 1989.
Career
Science staff member Institute of Physics of the Polish Academy of Science, Warsaw, 1983—1992. Postdoctoral fellow Fritz Haber Institute Max Planck Society, Berlin, 1990—1991, Xerox Palo Alto Research Center, California, 1992. Science staff member IHP-microelectronics, Frankfurt(Oder), Germany, since 1992.
Conference chairman Challenges in Predictive Process Simulation, since 1997. International advisory committee member International Training Institute for Materials Science, Hanoi, Vietnam. Project manager IHP-microelectronics, Frankfurt(Oder), 1998—2000.
Referee American Physical Society, Institute of Physics, United Kingdom, Elsevier Science, Netherlands, American Association for the Advancement of Science. Project leader von Neumann Institute for Computing, Jülich, Germany, since 1998. Invited lecturer, semiconductor science and technical.
Achievements
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Achievements include patents for silicon microelectronic technology. Patents pending for telecommunication. Discovery of atomic structure of the clean Si(113) surface. Discovery of atomic structure of the main electron trap in Gallium Arsenide (EL2 defect). Research in atomic diffusion mechanisms in solid state. Research in atomic structure of surfaces and semiconductor/dielectric interfaces. Research in atomic structure of defects in semiconductors and insulators. Research in dielectric breakdown mechanism in Metal–oxide–semiconductor field-effect transistor gate oxides.
Interests
Connections
Married Ewa Monika Mazurkiewicz, November 23, 1982. 1 child Piotr Wojciech (Wojtek).
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Born
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Nationality
Polish -
Ethnicity
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Religion
Roman Catholic