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Johan Åkerman Edit Profile

research scientist

Johan Åkerman, Swedish research scientist. Achievements include patents for MRAM element and methods for writing the MRAM element; patents for magnetic tunnel junction element structures and methods for fabricating the same; patents for reducing power consumption during MRAM writes using multiple current levels. Member of Institute of Electrical and Electronics Engineers Magnetics (president Sweden section 2007).

Background

Åkerman, Johan was born on March 20, 1970 in Malmö, Sweden.

Education

Master of Science, Lund Institute of Technology, Sweden, 1992. Master of Science in Engineering Physics, Ecole Polytechnique Federale de Lausanne, Switzerland, 1994. Doctor of Philosophy, Royal Institute of Technology, Stockholm, 1998.

Career

Research assistant Ecole Polytechnique Federale de Lausanne, 1994. Postdoctoral fellow University California, San Diego, 1999—2001. Senior staff scientist Motorola, Tempe, Arizona, 2001—2004, Freescale Semiconductor, Chandler, 2004—2005.

Senior researcher Royal Institute of Technology, Stockholm, since 2005. Presenter in field.

Achievements

  • Achievements include patents for MRAM element and methods for writing the MRAM element. Patents for magnetic tunnel junction element structures and methods for fabricating the same. Patents for reducing power consumption during MRAM writes using multiple current levels.

Membership

Member of Institute of Electrical and Electronics Engineers Magnetics (president Sweden section 2007).