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Mark Ian Gardner Edit Profile

Semiconductor engineer

Mark Ian Gardner, American semiconductor engineer. Achievements include 70 patents in advanced transistor fabrication and device/process integration; key research in ultra thin gate dielectrics for integrated circuits. Member Institute of Electrical and Electronics Engineers (senior ).

Background

Gardner, Mark Ian was born on September 21, 1955 in Boston, Massachusetts, United States. Son of Raymond K. and Judith (Sample) Gardner.

Education

Bachelor of Science in Physics cum laude, Lowell (Massachusetts) Technological Institute, 1977. Master of Science in Physics, University Maryland, 1980.

Career

Epitaxial, ion implantation, diffusion process engineer Texas Instruments, Houston, 1980-1981. Member technical staff process, device integration Advanced Micro Device, Austin, Texas, since 1981. Co-chairman Complementary Metal Oxide Semiconductor devices and reliability International Electron Device Meeting, Washington, 1995-1996.

Mentor Semicondr. Research Group, Austin, since 1993.

Achievements

  • Achievements include 70 patents in advanced transistor fabrication and device/process integration. Key research in ultra thin gate dielectrics for integrated circuits.

Politics

The use of force should be supported, but only in extreme situations and only when the need is clear beyond reasonable doubt, and through appropriate international organizations.

Views

In a society where self-interest and hypocrisy are often seen as dominating, the Christians should nurture and promote values and purposes that are beyond us.

Membership

Member Institute of Electrical and Electronics Engineers (senior ).

Connections

Married Karen J. Baldwin, November 27, 1981. Children: Raymond, Benjamin, James Texas.

father:
Raymond K. Gardner

mother:
Judith (Sample) Gardner

spouse:
Karen J. Baldwin

children:
Benjamin Gardner

James Texas Gardner

Raymond Gardner