Background
Loboda, Mark Jon was born on January 15, 1962 in Chicago, Illinois, United States. Son of Jon A. and Camille R. (Maniszko) Loboda.
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Mark Jon Loboda
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Mark Jon Loboda, American Physicist. Achievements include the design of ultra-low noise, high frequency signal sources and novel processing techniques for metal and dielectricthin films used in integrated circuit fabrication. Recipient Outstanding Transaction Paper award, Institute of Electrical and Electronics Engineers Ultrasonics, Ferroelectrics and Frequency Control Society, 1988.
Education
Bachelor of Science in Physics, DePaul University, 1983; Master of Science in Applied Physics with distinction, DePaul University, 1985.
Career
Research scientist, research division, Raytheon Company, Lexington, Massachusetts, 1985-1989; senior research specialist, Dow Corning Corporation, Midland, Michigan, since 1989.
Achievements
Membership
Member Institute of Electrical and Electronics Engineers, Materials Research Society, Electrochemical Society.
Connections
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Born
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Nationality
American
Awards
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Recipient Outstanding Transaction Paper award, Institute of Electrical and Electronics Engineers Ultrasonics, Ferroelectrics and Frequency Control Society, 1988.Recipient Outstanding Transaction Paper award, Institute of Electrical and Electronics Engineers Ultrasonics, Ferroelectrics and Frequency Control Society, 1988.