Background
Konuma, Mitsuharu was born on January 19, 1950 in Ashibetsu, Hokkaido, Japan. Son of Tatsuro and Michiko Konuma.
(Plasma Techniques for Film Deposition describes the techn...)
Plasma Techniques for Film Deposition describes the technology and applications of cold plasma for thin-film deposition. The plasma is generated under low pressure and characterized by a non-thermal equilibrium. An attempt has been made to not only provide an introductory text but also to present the latest techniques and recent results. · Fundamentals of plasma science such as its characterization, chemical and physical reactions in plasmas, basic techniques to generate and to diagnose plasmas · Techniques for generating high-density plasmas are outlined like the conventional electrical and magnetic methods, and the modern schemes for inductively coupled and helicon-wave plasmas · Plasma diagnostic methods, such as optical spectroscopy, electrical probes, mass and energy analysis of excited molecules and ions in plasma · Specific techniques are treated for thin-film formation: sputter deposition, ion plating, plasma enhanced chemical vapor deposition and plasma! surface modification · Films, like amorphous, nano- and micro-crystalline silicon, polymorphs of carbon, i.e. amorphous phase, diamond, fullerenes and nanotubes, boron and carbon nitrides can be deposited
http://www.amazon.com/gp/product/184265151X/?tag=2022091-20
(Properties of thin films depend strongly upon the deposit...)
Properties of thin films depend strongly upon the deposition technique and conditions chosen. In order to achieve the desired film, optimum deposition conditions have to be found by carrying out experiments in a trial-and error fashion with varying parameters. The data obtained on one growth apparatus are often not transferable to another. This is especially true for film deposition processes using a cold plasma because of our poor under standing of the mechanisms. Relatively precise studies have been carried out on the role that physical effects play in film formation such as sputter deposition. However, there are many open questions regarding processes that involve chemical reactions, for example, reactive sputter deposition or plasma enhanced chemical vapor deposition. Much further research is re quired in order to understand the fundamental deposition processes. A sys tematic collection of basic data, some of which may be readily available in other branches of science, for example, reaction cross sections for gases with energetic electrons, is also required. The need for pfasma deposition techniques is felt strongly in industrial applications because these techniques are superior to traditional thin-film deposition techniques in many ways. In fact, plasma deposition techniques have developed rapidly in the semiconductor and electronics industries. Fields of possible application are still expanding. A reliable plasma reactor with an adequate in situ system for monitoring the deposition conditions and film properties must be developed to improve reproducibility and pro ductivity at the industrial level.
http://www.amazon.com/gp/product/3642845134/?tag=2022091-20
(Properties of thin films depend strongly upon the deposit...)
Properties of thin films depend strongly upon the deposition technique and conditions chosen. In order to achieve the desired film, optimum deposition conditions have to be found by carrying out experiments in a trial-and error fashion with varying parameters. The data obtained on one growth apparatus are often not transferable to another. This is especially true for film deposition processes using a cold plasma because of our poor under standing of the mechanisms. Relatively precise studies have been carried out on the role that physical effects play in film formation such as sputter deposition. However, there are many open questions regarding processes that involve chemical reactions, for example, reactive sputter deposition or plasma enhanced chemical vapor deposition. Much further research is re quired in order to understand the fundamental deposition processes. A sys tematic collection of basic data, some of which may be readily available in other branches of science, for example, reaction cross sections for gases with energetic electrons, is also required. The need for pfasma deposition techniques is felt strongly in industrial applications because these techniques are superior to traditional thin-film deposition techniques in many ways. In fact, plasma deposition techniques have developed rapidly in the semiconductor and electronics industries. Fields of possible application are still expanding. A reliable plasma reactor with an adequate in situ system for monitoring the deposition conditions and film properties must be developed to improve reproducibility and pro ductivity at the industrial level.
http://www.amazon.com/gp/product/3540540571/?tag=2022091-20
Konuma, Mitsuharu was born on January 19, 1950 in Ashibetsu, Hokkaido, Japan. Son of Tatsuro and Michiko Konuma.
Bachelor of Science, Aoyama Gakuin University, Tokyo, 1975. Master of Science, Aoyama Gakuin University, Tokyo, 1977. Doctor of Science, Aoyama Gakuin University, Tokyo, 1980.
Supervisor ANELVA Corporation, Tokyo, 1980-1983, 85-86. Visiting scientist University Zürich, Switzerland, 1983-1985. Materials scientist Max-Planck-Institute für Festkörperforschung, Stuttgart, Germany, since 1986.
Research scientist Institute für Werkstoffwissenschaften University Erlangen-Nürnberg, Erlangen, Germany, since 1992.
(Plasma Techniques for Film Deposition describes the techn...)
(Properties of thin films depend strongly upon the deposit...)
(Properties of thin films depend strongly upon the deposit...)
Member Japan Society Applied Physics, Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung.
Married Sumiko Takemasa, November 4, 1976. 1 child, Akira.