Background
Hwang, Chang-Gyu was born on January 23, 1953 in Pusan, Republic of Korea.
Hwang, Chang-Gyu was born on January 23, 1953 in Pusan, Republic of Korea.
Bachelor of Science in Electrical Engineering, Seoul National University, Republic of Korea, 1976. Master of Science in Electrical Engineering, Seoul National University, Republic of Korea, 1978. Doctor of Philosophy in Electrical and Computer Engineering, University Massachusetts, 1985.
Instructor Korea Naval Academy, 1978-1981. Post doctoral fellow, electrical engineering department Stanford University, California, 1985-1989. Counselor Intel, 1987-1989, head device development, 1989-1991.
Director, device technical development Samsung Electronics Limited company, Republic of Korea, 1989, director Institute Semiconductor Research Republic of Korea, 1992-1994, managing director member development Republic of Korea, 1994-1995, managing director technical development research Republic of Korea, 1995-1997, executive director device technical team Republic of Korea, 1998-1999, senior vice president, head Semiconductor research and development center Republic of Korea, 1998—2000, executive vice president, head memory semiconductor business division Republic of Korea, 2000—2001, president, memory division Republic of Korea, 2001—2007, president, semiconductor business Republic of Korea, since 2004. Frequent lecturer Cambridge University, Stanford University, Massachusetts Institute of Technology, Harvard Business School, Columbia University, University California Berkeley, Peking University and others.
Fellow Institute of Electrical and Electronics Engineers (Andrew S. Grove award, 2006). Member Institute of Electrical and Electronics Engineers Electron Devices Society, World Very Large Scale Integration Society (auditor since 1991), Circuits & Systems Society, World International Electron Devices Meeting Society (auditor since 1993).