Background
Ashburn, Peter was born on August 28, 1950 in Rotherham, Yorkshire, England. Son of Harold Willey and Ivy (Ford) Ashburn.
(Addresses new developments in the design and fabrication ...)
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
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electrical and computer science educator
Ashburn, Peter was born on August 28, 1950 in Rotherham, Yorkshire, England. Son of Harold Willey and Ivy (Ford) Ashburn.
Bachelor of Science, Leeds (Yorkshire, England) University, 1971. Doctor of Philosophy, Leeds (Yorkshire, England) University, 1974.
Research engineer, Philips Research laboratories, Surrey, England, 1974-1978;
lecturer, Southampton (Hants, England) University, 1978-1985;
senior lecturer, Southampton (Hants, England) University, 1985-1992;
reader department electrical and computer science, Southampton (Hants, England) University, since 1992. Consultant General Electric Company Hirst Research laboratories, London, 1984-1986. Visiting lecturer U. Waterloo, England, 1985.
Visiting researcher Centre National Etudes des Telecomm., Grenoble, France, 1991, GECHirst Research laboratories, London, 1985.
(Addresses new developments in the design and fabrication ...)
Member Institute of Electrical and Electronics Engineers, Institution Electrical Engineers.
Married Ann Elizabeth Alexandra Templeton, September 18, 1976. Children: Jennifer Elizabeth, Susan Alexandra.