Background
Li, Wei was born on September 18, 1963 in Luoyang, Henan, China. Son of Dao Yi Li and Cheng Ying Ma.
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Wei Li
Edit ProfileEducation
Master of Science in Semiconductor Material Physics, Hebei U.Tech., Tianjin, 1988. Doctor of Philosophy in Semiconductor Material and Device Physics, Institute Semiconductors, Beijing, 1995.
Career
Researcher Institute Radioprotection, Taiyuan, China, 1983—1985. Assistant lecturer Hebei University of Technology, Tianjin, China, 1988—1992. Postdoctoral fellow Linkoping University, Sweden, 1995—1997.
Senior researcher Tampere University of Technology, Finland, 1997—2006. Semiconductor product manager EpiCrystals Inc., since 2006.
Achievements
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Achievements include discovery of Ga vacancy and N interstitial in Ga(In)NAs and origin of improved luminescence efficiency after annealing of Ga(In)NAs materials. Development of strain-compensated GaInNAs/GaNAs and GaInNAs/GaAsP laser structure. Development of state-of–the-art 1550nm monolithic mode-locking lasers. Development of device quality Gallium Arsenide epilayer on Ge substrate. Development of high performance tandem solar cell and tunnel junction. Development of state-of-the-art high power diode lasers. Record high performance 1320 nm GaInNAs/Gallium Arsenide quantum well laser. Research in high power broadband superluminescent diodes.
Interests
Connections
Married Ying Wang, September 29, 1988. Children: Xiao Ou, Janet.
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Born
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Nationality
China -
Ethnicity
Education
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1988
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1995
Career
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1983 - 1985
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1988 - 1992
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1995 - 1997
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1997 - 2006
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2006
Awards
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Recipient Outstanding Academic Title award, American Library Association, 2005, Best Reference Work award, American Society Engineering Education, 2005.Recipient Outstanding Academic Title award, American Library Association, 2005, Best Reference Work award, American Society Engineering Education, 2005.