Background
Mönch, Winfried H. was born on May 26, 1934 in Berlin.
( Using the continuum of interface-induced gap states (IF...)
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
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Mönch, Winfried H. was born on May 26, 1934 in Berlin.
Diploma in physics, University Göttingen, Germany, 1958. Doctor in Natural Sciences, University Göttingen, Germany, 1961. Habilitation in Physics, Rheinisch-Wesfalische Technische Hochschule, Aachen, Germany, 1968.
Scientist University Göttingen, 1961-1962. Senior scientist General Electric Company Research Institute, Frankfurt, Germany, 1962-1965. Lecturer Rheinisch-Westfälische Technische Hochschule, 1965-1968.
Associate professor Rheinisch-Westfalische Technische Hochschule, 1970-1975. Professor Gerhard Mercator University Duisburg, Germany, since 1975. W. Schottky professor Stanford (California) University, 1981.
( Using the continuum of interface-induced gap states (IF...)
(Semiconductor Surfaces and Interfaces deals with structur...)