Yukhnevich studied physics at Belarusian State University and graduated in 1961. He subsequently completed doctoral-level training in physical mathematics at the university, receiving the qualification of Doctor in Physical Mathematics in 1964. His education established the foundation for a research career combining solid-state physics, physical chemistry, and semiconductor materials science.
Yukhnevich began his professional scientific career at the Reserve Institute of Physical Chemical Problems of Belarusian State University, where he was appointed a leading scientific worker in 1973. His research has addressed the optical and electronic properties of defects in silicon, including radiation-induced luminescence and emissive structural defects, as well as the physical chemistry of silicon surfaces. Later work examined the formation of micro- and nanorelief during acid and alkaline etching, anisotropic dissolution near chemical-mask edges, and models for chemical polishing of silicon crystals. His research connected fundamental studies of crystal defects and surface processes with possible applications in semiconductor devices, microtechnology, nanotechnology, and silicon photonics.
Conducted research on radiation-induced and structurally emissive defects in silicon and examined their potential use in silicon-based laser and light-amplifier technologies.
Contributed to the study of silicon surface morphology, anisotropic dissolution, and chemical polishing processes relevant to semiconductor microtechnology and nanotechnology.
(Co-authored study of micro- and nanorelief formation on t...)
2007(Co-authored investigation of the characteristics of (001)...)
2007(Co-authored study of the micro- and nanorelief formed dur...)
2009(Article proposing the use of highly emissive structural d...)
2007(Research article reporting scanning-tunneling-microscopy ...)
2001(Conference contribution co-authored by A. V. Yukhnevich, ...)
(Soviet invention concerning a method of gas analysis base...)
1982
