Background
Kasper, Erich Alex was born on March 6, 1943 in Eisenerz, Styria, Austria. Arrived in Germany, 1971. Son of Franz and Hedwig Kasper.
(This two-volume work covers recent developments in the si...)
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T. P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(
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(This two-volume work covers recent developments in the si...)
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.
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Electrical engineering educator
Kasper, Erich Alex was born on March 6, 1943 in Eisenerz, Styria, Austria. Arrived in Germany, 1971. Son of Franz and Hedwig Kasper.
Doctor of Philosophy, University Graz, Austria, 1971.
Scientist, General Electric Company-Telefunken, Ulm, Germany, 1971-1980; laboratory head, General Electric Company, Ulm, 1980-1990; department head, Daimler Benz, Ulm, 1990-1993; director, Institute Halbleiter Technology, Stuttgart, Germany, since 1993; professor, U. Stuttgart, since 1993. Curator Physikalisch Blaetter, Weinheim, since 1990.
(This two-volume work covers recent developments in the si...)
(This two-volume work covers recent developments in the si...)
Beirat Institute Schicht und Ionen Technik, Juelich, Germany, 1989-1995, Beirat Institute Halbleiter Physik, Frankfurt, Germany, 1992-1996, Kuratorium Intellectual Property Multimedia Subsystem, Stuttgart, since 1998. Member of American Association for the Advancement of Science, Institute of Electrical and Electronics Engineers, Gesellschaft Mikroelektronik und mechanik, Verein Deutscher Elektrotechnik, Deutsche Physical Gesellschaft, Electrochemical Society.
Married Anna Christine Aschacher, April 8, 1971. Children: Wolfgang, Sebastian, Johannes.