Yoonho Khang

Education

Bachelor, Seoul National University, 1991. Master of Science, Seoul National University, 1993. Doctor of Philosophy, Seoul National University, 1996.

Career

Postdoctoral fellow Lawrence Berkley National Laboratory, California, 1996—1999. Member research staff Samsung Advanced Institute of Technology, Yongin, Republic of Korea, 1999.

Achievements

• Achievements include patents in field. Patents pending for nanoparticle structure and method of manufacturing the same. Patents pending for phase change memory device and fabrication method thereof.
  
  Patents pending for nanoparticle electroluminescence and method of. Patents pending for phase change random access memory and method of operating the same. Patents pending for phase change memory including resistance element having diode function and methods of fabricating and operating the same.
  
  Patents pending for phase change material, phase-change random access memory having the same and method of operating phase-change random access memory. Patents pending for method of fabricating phase change ram. Patents pending for method of forming phase change material thin film.
  
  Patents pending for pram comprising doped phase change layer and method of operating the same.

Works

• Other Work

  • Contributor articles to professional journals.

Membership

Member of Materials Research Society (warrendale, pa, usa).

Connections

Married, 2001; 1 child.