Background
Baklanov, Mikhail Rodionovich was born on January 18, 1949 in Irkutsk, Siberia, Russia.
Baklanov, Mikhail Rodionovich was born on January 18, 1949 in Irkutsk, Siberia, Russia.
M, Novosibirsk State University, 1971; Doctor of Philosophy, Institute Semiconductor Physics, Novosibirsk, 1974.
Scientist, Institute Semiconductor Physics, Novosibirsk, 1974-1983; senior scientist, Institute Semiconductor Physics, Novosibirsk, 1983-1990; head of laboratory, Institute Semiconductor Physics, Novosibirsk, 1990-1995; visiting professor, Interuniv. Microelectronics Center, Leuven, Belgium, since 1995.
Member Materials Research Society, Electrochemical Society Inc.
Son of Rodion Iosifovich Baklanov and Marselina Innokentievna Pavlova. M.Marta Georgievna Simanovskaya, February 19, 1971. Children: Sveta, Dasha.